Fingerprint Fingerprint is based on mining the text of the person's scientific documents to create an index of weighted terms, which defines the key subjects of each individual researcher.

  • 16 Similar Profiles
oxides Physics & Astronomy
photoelectron spectroscopy Physics & Astronomy
atomic layer epitaxy Physics & Astronomy
Metals Engineering & Materials Science
Oxides Engineering & Materials Science
metals Physics & Astronomy
Graphene Engineering & Materials Science
Atomic layer deposition Engineering & Materials Science

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Research Output 1984 2017

  • 20163 Citations
  • 58 h-Index
  • 297 Article
  • 59 Conference contribution
  • 3 Chapter
  • 1 Review article
1 Citations

A crystalline oxide passivation on In0.53Ga0.47As (100)

Qin, X., Wang, W. E., Droopad, R., Rodder, M. S. & Wallace, R. M. Mar 28 2017 In : Journal of Applied Physics. 121, 12, 125302

Research output: Research - peer-reviewArticle

atomic layer epitaxy
metal oxide semiconductors

A kinetic Monte Carlo simulation method of van der Waals epitaxy for atomistic nucleation-growth processes of transition metal dichalcogenides

Nie, Y., Liang, C., Cha, P. R., Colombo, L., Wallace, R. M. & Cho, K. Dec 1 2017 In : Scientific Reports. 7, 1, 2977

Research output: Research - peer-reviewArticle

transition metals

Carbon-assisted chemical vapor deposition of hexagonal boron nitride

Ismach, A., Chou, H., Mende, P., Dolocan, A., Addou, R., Aloni, S., Wallace, R., Feenstra, R., Ruoff, R. S. & Colombo, L. Jun 1 2017 In : 2D Materials. 4, 2, 025117

Research output: Research - peer-reviewArticle

Boron nitride
Chemical vapor deposition
boron nitride
boron nitrides
1 Citations

Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric

Zhao, P., Azcatl, A., Bolshakov, P., Moon, J., Hinkle, C. L., Hurley, P. K., Wallace, R. M. & Young, C. D. Jan 1 2017 In : Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 35, 1, 01A118

Research output: Research - peer-reviewArticle

Transition metals

Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectrics

Bolshakov, P., Zhao, P., Azcatl, A., Hurley, P. K., Wallace, R. M. & Young, C. D. Jun 25 2017 In : Microelectronic Engineering. 178, p. 190-193 4 p.

Research output: Research - peer-reviewArticle

Field effect transistors
High-k dielectric
molybdenum disulfide