(1 0 1) and (0 0 2) oriented AlN thin films deposited by sputtering

A. Taurino, M. A. Signore, M. Catalano, M. J. Kim

Research output: Research - peer-reviewArticle

Abstract

Reactively sputtered aluminum nitride (AlN) is a piezoelectric material, largely used for technological applications, ranging from sensors to energy harvesting. The structural properties of AlN are crucial for its integration in piezoelectric devices. The preferential orientation of the film discriminates its applicability in devices, where the excitation of the longitudinal rather than the shear mode is required. In order to tune the film crystallographic orientation, a fine control of the sputtering parameters is required. In this paper, a structural switch, from (0 0 2) to (1 0 1) preferential orientation was obtained by increasing the total pressure in the deposition chamber with the only use of the throttle valve, while keeping constant all the other deposition parameters. This structural change was interpreted on the basis of the growth kinetics, which explains how deposition parameters control the energy of the species impinging on the substrate.

LanguageEnglish (US)
Pages18-20
Number of pages3
JournalMaterials Letters
Volume200
DOIs
StatePublished - Aug 1 2017

Fingerprint

aluminum nitrides
sputtering
thin films
Aluminum nitride
Sputtering
Thin films
aluminum nitride
energy
switches
chambers
shear
sensors
kinetics
excitation
Piezoelectric devices
Piezoelectric materials
Energy harvesting
Growth kinetics
Structural properties
Switches

Keywords

  • AlN
  • Preferential orientation
  • Sputtering deposition
  • TEM
  • XRD

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

(1 0 1) and (0 0 2) oriented AlN thin films deposited by sputtering. / Taurino, A.; Signore, M. A.; Catalano, M.; Kim, M. J.

In: Materials Letters, Vol. 200, 01.08.2017, p. 18-20.

Research output: Research - peer-reviewArticle

Taurino, A. ; Signore, M. A. ; Catalano, M. ; Kim, M. J./ (1 0 1) and (0 0 2) oriented AlN thin films deposited by sputtering. In: Materials Letters. 2017 ; Vol. 200. pp. 18-20
@article{e5cce9365d0c4f24bf32aa63e85b42e3,
title = "(1 0 1) and (0 0 2) oriented AlN thin films deposited by sputtering",
abstract = "Reactively sputtered aluminum nitride (AlN) is a piezoelectric material, largely used for technological applications, ranging from sensors to energy harvesting. The structural properties of AlN are crucial for its integration in piezoelectric devices. The preferential orientation of the film discriminates its applicability in devices, where the excitation of the longitudinal rather than the shear mode is required. In order to tune the film crystallographic orientation, a fine control of the sputtering parameters is required. In this paper, a structural switch, from (0 0 2) to (1 0 1) preferential orientation was obtained by increasing the total pressure in the deposition chamber with the only use of the throttle valve, while keeping constant all the other deposition parameters. This structural change was interpreted on the basis of the growth kinetics, which explains how deposition parameters control the energy of the species impinging on the substrate.",
keywords = "AlN, Preferential orientation, Sputtering deposition, TEM, XRD",
author = "A. Taurino and Signore, {M. A.} and M. Catalano and Kim, {M. J.}",
year = "2017",
month = "8",
doi = "10.1016/j.matlet.2017.04.081",
volume = "200",
pages = "18--20",
journal = "Materials Letters",
issn = "0167-577X",
publisher = "Elsevier",

}

TY - JOUR

T1 - (1 0 1) and (0 0 2) oriented AlN thin films deposited by sputtering

AU - Taurino,A.

AU - Signore,M. A.

AU - Catalano,M.

AU - Kim,M. J.

PY - 2017/8/1

Y1 - 2017/8/1

N2 - Reactively sputtered aluminum nitride (AlN) is a piezoelectric material, largely used for technological applications, ranging from sensors to energy harvesting. The structural properties of AlN are crucial for its integration in piezoelectric devices. The preferential orientation of the film discriminates its applicability in devices, where the excitation of the longitudinal rather than the shear mode is required. In order to tune the film crystallographic orientation, a fine control of the sputtering parameters is required. In this paper, a structural switch, from (0 0 2) to (1 0 1) preferential orientation was obtained by increasing the total pressure in the deposition chamber with the only use of the throttle valve, while keeping constant all the other deposition parameters. This structural change was interpreted on the basis of the growth kinetics, which explains how deposition parameters control the energy of the species impinging on the substrate.

AB - Reactively sputtered aluminum nitride (AlN) is a piezoelectric material, largely used for technological applications, ranging from sensors to energy harvesting. The structural properties of AlN are crucial for its integration in piezoelectric devices. The preferential orientation of the film discriminates its applicability in devices, where the excitation of the longitudinal rather than the shear mode is required. In order to tune the film crystallographic orientation, a fine control of the sputtering parameters is required. In this paper, a structural switch, from (0 0 2) to (1 0 1) preferential orientation was obtained by increasing the total pressure in the deposition chamber with the only use of the throttle valve, while keeping constant all the other deposition parameters. This structural change was interpreted on the basis of the growth kinetics, which explains how deposition parameters control the energy of the species impinging on the substrate.

KW - AlN

KW - Preferential orientation

KW - Sputtering deposition

KW - TEM

KW - XRD

UR - http://www.scopus.com/inward/record.url?scp=85018556246&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85018556246&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2017.04.081

DO - 10.1016/j.matlet.2017.04.081

M3 - Article

VL - 200

SP - 18

EP - 20

JO - Materials Letters

T2 - Materials Letters

JF - Materials Letters

SN - 0167-577X

ER -