A comprehensive study on variations of discrete IGBT characteristics due to package degradation triggered by thermal stress

Syed H. Ali, Serkan Dusmez, Bilal Akin

Research output: ResearchConference contribution

Abstract

Identification of power device failure precursors is essential for condition monitoring, fault severity assessment and lifetime estimation. These tools constitute the fundamental elements to achieve highly reliable power converters with self-diagnosis capability, which can report incipient faults at very early stage. In this paper, several discrete IGBTs are thermally aged on a custom-built modular test-bed. I-V characteristics are monitored periodically using an automated curve tracer throughout the aging, and the fault/aging related patterns are comprehensively analyzed. The variations in saturation voltage, gate threshold voltage, transfer capacitances, and gate charge, which are the potential candidates for aging precursors, are analyzed in detail. The experimental and failure analysis results suggest that on-state voltage drop and gate threshold voltage are the two essential aging precursors for monitoring die-attach solder and gate oxide degradations.

LanguageEnglish (US)
Title of host publicationECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509007370
DOIs
StatePublished - Feb 13 2017
Event2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016 - Milwaukee, United States
Duration: Sep 18 2016Sep 22 2016

Other

Other2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016
CountryUnited States
CityMilwaukee
Period9/18/169/22/16

Fingerprint

Thermal Stress
Degradation
Voltage
Insulated gate bipolar transistors (IGBT)
Thermal stress
Aging of materials
Precursor
Fault
Threshold voltage
Failure Analysis
Power Converter
Condition Monitoring
Experimental Analysis
Capacitance
Testbed
Oxides
Saturation
Lifetime
Die
Charge

Keywords

  • aging
  • collector-emitter voltage drop
  • failure diagnosis
  • failure precursor
  • gate threshold voltage
  • IGBT
  • Thermal cycling

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Energy Engineering and Power Technology
  • Control and Optimization

Cite this

Ali, S. H., Dusmez, S., & Akin, B. (2017). A comprehensive study on variations of discrete IGBT characteristics due to package degradation triggered by thermal stress. In ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings [7854665] Institute of Electrical and Electronics Engineers Inc.. DOI: 10.1109/ECCE.2016.7854665

A comprehensive study on variations of discrete IGBT characteristics due to package degradation triggered by thermal stress. / Ali, Syed H.; Dusmez, Serkan; Akin, Bilal.

ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. 7854665.

Research output: ResearchConference contribution

Ali, SH, Dusmez, S & Akin, B 2017, A comprehensive study on variations of discrete IGBT characteristics due to package degradation triggered by thermal stress. in ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings., 7854665, Institute of Electrical and Electronics Engineers Inc., 2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016, Milwaukee, United States, 9/18/16. DOI: 10.1109/ECCE.2016.7854665
Ali SH, Dusmez S, Akin B. A comprehensive study on variations of discrete IGBT characteristics due to package degradation triggered by thermal stress. In ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings. Institute of Electrical and Electronics Engineers Inc.2017. 7854665. Available from, DOI: 10.1109/ECCE.2016.7854665
Ali, Syed H. ; Dusmez, Serkan ; Akin, Bilal. / A comprehensive study on variations of discrete IGBT characteristics due to package degradation triggered by thermal stress. ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017.
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