A crystalline oxide passivation on In0.53Ga0.47As (100)

Xiaoye Qin, Wei E. Wang, Ravi Droopad, Mark S. Rodder, Robert M. Wallace

Research output: Contribution to journalArticle

Abstract

The passivation of In0.53Ga0.47As surfaces is highly desired for transistor performance. In this study, the feasibility of a crystalline oxide passivation on In0.53Ga0.47As (100) is demonstrated experimentally. The (3 × 1) and (3 × 2) crystalline oxide reconstructions are formed on the de-capped In0.53Ga0.47As (100) surfaces through the control of the surface oxidation states. By monitoring the evolution of chemical states and associated structures of the In0.53Ga0.47As (100) surfaces upon O2 and subsequent atomic hydrogen exposure, we find that the control of the Ga oxide states is critical to the formation of the crystalline oxide reconstructions. The stability of the crystalline oxide layers upon the atomic layer deposition of HfO2 is investigated as well. Furthermore, the capacitance voltage behavior of metal oxide semiconductor capacitors with an HfO2 dielectric layer reveals that the crystalline oxide reconstructions result in a decrease in the density of interface traps (Dit) from ∼1 × 1013 cm−2 eV−1 to ∼1 × 1012 cm−2 eV−1 compared with the de-capped surface. The crystalline oxide passivation offers a platform to develop In0.53Ga0.47As devices with a low density of interface states.

Original languageEnglish (US)
Article number125302
JournalJournal of Applied Physics
Volume121
Issue number12
DOIs
StatePublished - Mar 28 2017

Fingerprint

Oxides
Crystalline materials
Passivation
Atomic layer deposition
Interface states
Transistors
Capacitors
Capacitance
Semiconductor materials
Oxidation
Hydrogen
Monitoring
Metals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Qin, X., Wang, W. E., Droopad, R., Rodder, M. S., & Wallace, R. M. (2017). A crystalline oxide passivation on In0.53Ga0.47As (100). Journal of Applied Physics, 121(12), [125302]. DOI: 10.1063/1.4979202

A crystalline oxide passivation on In0.53Ga0.47As (100). / Qin, Xiaoye; Wang, Wei E.; Droopad, Ravi; Rodder, Mark S.; Wallace, Robert M.

In: Journal of Applied Physics, Vol. 121, No. 12, 125302, 28.03.2017.

Research output: Contribution to journalArticle

Qin, X, Wang, WE, Droopad, R, Rodder, MS & Wallace, RM 2017, 'A crystalline oxide passivation on In0.53Ga0.47As (100)' Journal of Applied Physics, vol 121, no. 12, 125302. DOI: 10.1063/1.4979202
Qin X, Wang WE, Droopad R, Rodder MS, Wallace RM. A crystalline oxide passivation on In0.53Ga0.47As (100). Journal of Applied Physics. 2017 Mar 28;121(12). 125302. Available from, DOI: 10.1063/1.4979202

Qin, Xiaoye; Wang, Wei E.; Droopad, Ravi; Rodder, Mark S.; Wallace, Robert M. / A crystalline oxide passivation on In0.53Ga0.47As (100).

In: Journal of Applied Physics, Vol. 121, No. 12, 125302, 28.03.2017.

Research output: Contribution to journalArticle

@article{c8a837498bdb466ca0a8765cd818c5f0,
title = "A crystalline oxide passivation on In0.53Ga0.47As (100)",
abstract = "The passivation of In0.53Ga0.47As surfaces is highly desired for transistor performance. In this study, the feasibility of a crystalline oxide passivation on In0.53Ga0.47As (100) is demonstrated experimentally. The (3 × 1) and (3 × 2) crystalline oxide reconstructions are formed on the de-capped In0.53Ga0.47As (100) surfaces through the control of the surface oxidation states. By monitoring the evolution of chemical states and associated structures of the In0.53Ga0.47As (100) surfaces upon O2 and subsequent atomic hydrogen exposure, we find that the control of the Ga oxide states is critical to the formation of the crystalline oxide reconstructions. The stability of the crystalline oxide layers upon the atomic layer deposition of HfO2 is investigated as well. Furthermore, the capacitance voltage behavior of metal oxide semiconductor capacitors with an HfO2 dielectric layer reveals that the crystalline oxide reconstructions result in a decrease in the density of interface traps (Dit) from ∼1 × 1013 cm−2 eV−1 to ∼1 × 1012 cm−2 eV−1 compared with the de-capped surface. The crystalline oxide passivation offers a platform to develop In0.53Ga0.47As devices with a low density of interface states.",
author = "Xiaoye Qin and Wang, {Wei E.} and Ravi Droopad and Rodder, {Mark S.} and Wallace, {Robert M.}",
year = "2017",
month = "3",
doi = "10.1063/1.4979202",
volume = "121",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - A crystalline oxide passivation on In0.53Ga0.47As (100)

AU - Qin,Xiaoye

AU - Wang,Wei E.

AU - Droopad,Ravi

AU - Rodder,Mark S.

AU - Wallace,Robert M.

PY - 2017/3/28

Y1 - 2017/3/28

N2 - The passivation of In0.53Ga0.47As surfaces is highly desired for transistor performance. In this study, the feasibility of a crystalline oxide passivation on In0.53Ga0.47As (100) is demonstrated experimentally. The (3 × 1) and (3 × 2) crystalline oxide reconstructions are formed on the de-capped In0.53Ga0.47As (100) surfaces through the control of the surface oxidation states. By monitoring the evolution of chemical states and associated structures of the In0.53Ga0.47As (100) surfaces upon O2 and subsequent atomic hydrogen exposure, we find that the control of the Ga oxide states is critical to the formation of the crystalline oxide reconstructions. The stability of the crystalline oxide layers upon the atomic layer deposition of HfO2 is investigated as well. Furthermore, the capacitance voltage behavior of metal oxide semiconductor capacitors with an HfO2 dielectric layer reveals that the crystalline oxide reconstructions result in a decrease in the density of interface traps (Dit) from ∼1 × 1013 cm−2 eV−1 to ∼1 × 1012 cm−2 eV−1 compared with the de-capped surface. The crystalline oxide passivation offers a platform to develop In0.53Ga0.47As devices with a low density of interface states.

AB - The passivation of In0.53Ga0.47As surfaces is highly desired for transistor performance. In this study, the feasibility of a crystalline oxide passivation on In0.53Ga0.47As (100) is demonstrated experimentally. The (3 × 1) and (3 × 2) crystalline oxide reconstructions are formed on the de-capped In0.53Ga0.47As (100) surfaces through the control of the surface oxidation states. By monitoring the evolution of chemical states and associated structures of the In0.53Ga0.47As (100) surfaces upon O2 and subsequent atomic hydrogen exposure, we find that the control of the Ga oxide states is critical to the formation of the crystalline oxide reconstructions. The stability of the crystalline oxide layers upon the atomic layer deposition of HfO2 is investigated as well. Furthermore, the capacitance voltage behavior of metal oxide semiconductor capacitors with an HfO2 dielectric layer reveals that the crystalline oxide reconstructions result in a decrease in the density of interface traps (Dit) from ∼1 × 1013 cm−2 eV−1 to ∼1 × 1012 cm−2 eV−1 compared with the de-capped surface. The crystalline oxide passivation offers a platform to develop In0.53Ga0.47As devices with a low density of interface states.

UR - http://www.scopus.com/inward/record.url?scp=85016411379&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85016411379&partnerID=8YFLogxK

U2 - 10.1063/1.4979202

DO - 10.1063/1.4979202

M3 - Article

VL - 121

JO - Journal of Applied Physics

T2 - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

M1 - 125302

ER -